bc 846w ... bc 850w 1 sep-28-1999 npn silicon af transistors ? for af input stages and driver applications ? high current gain ? low collector-emitter saturation voltage ? low noise between 30 hz and 15 khz ? complementary types: bc 856w, bc 857w, bc 858w bc 959w, bc 860w (pnp) 1 3 vso05561 2 type marking pin configuration package bc 846aw bc 846bw bc 847aw bc 847bw bc 847cw bc 848aw bc 848bw bc 848cw bc 849bw bc 849cw bc 850bw bc 850cw 1as 1bs 1es 1fs 1gs 1js 1ks 1ls 2bs 2cs 2fs 4gs 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323
bc 846w ... bc 850w 2 sep-28-1999 maximum ratings parameter symbol bc 846w bc 847w bc 850w bc 848w bc 849w unit collector-emitter voltage v ceo 65 45 30 v collector-base voltage v cbo 80 50 30 collector-emitter voltage v ces 80 50 v 30 emitter-base voltage v ebo 6 6 5 v dc collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 peak emitter current 200 i em total power dissipation , t s = 124 c p tot 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) 240 k/w r thja junction - soldering point r thjs 105 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bc846w bc847/850w bc848/849w v (br)ceo 65 45 30 - - - - - - v collector-base breakdown voltage i c = 10 a, i b = 0 bc 846w bc 847/850w bc 848/849w v (br)cbo 80 50 30 - - - - - - 1) package mounted on pcb 40mm x 40mm x 1.5mm / 1cm 2 cu
bc 846w ... bc 850w 3 sep-28-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values min. max. typ. dc characteristics v collector-emitter breakdown voltage i c = 10 a, v be = 0 v (br)ces - - - - - - 80 50 30 bc 846w bc 847/850w bc 848/849w - - emitter-base breakdown voltage i e = 1 a, i c = 0 - - 6 5 v (br)ebo bc 846/847w bc 848-850w - 15 - i cbo collector cutoff current v cb = 30 v, i e = 0 na - - collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c i cbo 5 a h fe - - - - - - h fe -group a h fe -group b h fe -group c dc current gain 1) i c = 10 a, v ce = 5 v 140 250 480 - h fe -group a h fe -group b h fe -group c h fe 110 200 420 dc current gain 1) i c = 2 ma, v ce = 5 v 220 450 800 180 290 520 mv collector-emitter saturation voltage1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma 90 200 250 600 - - v cesat - - 700 900 - - v besat base-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma 660 - base-emitter voltage 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 580 - 700 770 1) pulse test: t 300 s, d = 2%
bc 846w ... bc 850w 4 sep-28-1999 electrical characteristics at t a = 25 c, unless otherwise specified. parameter values symbol unit typ. max. min. ac characteristics f t - mhz transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz - 250 pf collector-base capacitance v cb = 10 v, f = 1 mhz 2 3 - c cb 15 10 - c eb emitter-base capacitance v eb = 0.5 v, f = 1 mhz 2.7 4.5 8.7 - - - h 11e - - - h fe -gr. a h fe -gr. b h fe -gr. c short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz k ? - - - 1.5 2 3 h fe -gr. a h fe -gr. b h fe -gr. c h 12e open-circuit reverse voltage transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz - - - 10 -4 h 21e - - - short-circuit forward current transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c - - - 200 330 600 - h fe -gr. a h fe -gr. b h fe -gr. c h 22e 18 30 60 open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz - - - - - - s db noise figure i c = 200 a, v ce = 5 v, r s = 2 k ? , f = 1 khz, ? f = 200 hz f - bc 846w bc 847w bc 848w - 10 noise figure i c = 200 a, v ce = 5 v, r s = 2 k ? , f = 1 khz, ? f = 200 hz 4 4 1.2 1 bc 849w bc 850w f - - equivalent noise voltage i c = 200 a, v ce = 5 v, r s = 2 k ? , f = 10 ... 50 hz bc 850w v n - - 0.135 v
bc 846w ... bc 850w 5 sep-28-1999 collector-base capacitance c cb = f ( v cbo ) emitter-base capacitance c eb = f ( v ebo ) 0 4 10 5 10 10 ehp00361 v cb0 c eb0 v 6 2 eb0 v eb c 8 10 pf 12 cb0 c -1 0 1 c cb ( ( ) bc 846...850 ) total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t s t a permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00362 -6 0 10 5 d = 5 10 1 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t transition frequency f t = f ( i c ) v ce = 5v 10 10 10 10 ehp00363 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c
bc 846w ... bc 850w 6 sep-28-1999 collector cutoff current i cbo = f ( t a ) v cb = 30v 10 0 50 100 150 ehp00381 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 20 10 0 ehp00367 v cesat 10 ma 10 c 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c dc current gain h fe = f ( i c ) v ce = 5v 10 10 10 10 ehp00365 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c base-emitter saturation voltage i c = f (v besat ), h fe = 20 0 10 ehp00364 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c
bc 846w ... bc 850w 7 sep-28-1999 h parameter h e = f ( v ce ) normalized i c = 2ma 0 0102030 ehp00369 v ce h e v 1.0 0.5 1.5 2.0 = 2 ma h h h h e e e e 21 11 12 22 c h parameter h e = f ( i c ) normalized v ce = 5v 10 10 10 ehp00368 ma -1 0 1 5 e h 2 10 -1 10 1 10 10 0 5 5 5 h 11e h 12e h 21e h 22e v ce = 5 v c noise figure f = f ( v ce ) i c = 0.2ma, r s = 2k ? , f = 1khz 0 10 10 10 10 bc 846...850 ehp00370 v ce f v 10 5 15 db 20 -1 0 1 2 5 noise figure f = f ( f ) i c = 0.2ma, v ce = 5v, r s = 2k ? 10 10 10 10 bc 846...850 ehp00371 f khz db -2 -1 1 2 20 10 0 5 15 f 0 10
bc 846w ... bc 850w 8 sep-28-1999 noise figure f = f ( i c ) v ce = 5v, f = 1khz 10 10 10 10 bc 846...850 ehp00373 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ??? s r ? ? c noise figure f = f ( i c ) v ce = 5v, f = 120hz 10 10 10 10 bc 846...850 ehp00372 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ??? s r ? ? c noise figure f = f ( i c ) v ce = 5v, f = 10khz 10 10 10 10 bc 846...850 ehp00374 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ? ? ? s r ? ? c
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